MRF6V14300HR3 mrf6v14300hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets rf power transistors designed for applications operating at frequencies between 1200 and 1400 mhz, 1% to 12% duty cycle. these devices are suitable for use in pulsed applications. ? typical pulsed performance: v dd = 50 volts, i dq = 150 ma, p out = 330 watts peak (39.6 w avg.), f = 1400 mhz, pulse width = 300 sec, duty cycle = 12% power gain ? 18 db drain efficiency ? 60.5% ? capable of handling 5:1 vswr, @ 50 vdc, 1400 mhz, 330 watts peak power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +100 vdc gate - source voltage v gs - 6.0, +10 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 65 c, 330 w pulsed, 300 sec pulse width, 12% duty cycle r jc 0.13 c/w 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6v14300h rev. 2, 11/2008 freescale semiconductor technical data 1400 mhz, 330 w, 50 v pulsed lateral n - channel rf power mosfets MRF6V14300HR3 mrf6v14300hsr3 case 465a - 06, style 1 ni - 780s mrf6v14300hsr3 case 465 - 06, style 1 ni - 780 MRF6V14300HR3 ? freescale semiconductor, inc., 2008. all rights reserved.
2 rf device data freescale semiconductor MRF6V14300HR3 mrf6v14300hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc drain- source breakdown voltage (v gs = 0 vdc, i d = 100 ma) v (br)dss 100 ? ? vdc zero gate voltage drain leakage current (v ds = 50 vdc, v gs = 0 vdc) i dss ? ? 50 adc zero gate voltage drain leakage current (v ds = 90 vdc, v gs = 0 vdc) i dss ? ? 2.5 ma on characteristics gate threshold voltage (v ds = 10 vdc, i d = 662 adc) v gs(th) 0.9 1.6 2.4 vdc gate quiescent voltage (v dd = 50 vdc, i d = 150 madc, measured in functional test) v gs(q) 1.5 2.4 3 vdc drain- source on - voltage (v gs = 10 vdc, i d = 1.63 adc) v ds(on) ? 0.26 ? vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.6 ? pf output capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 350 ? pf input capacitance (v ds = 50 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 330 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 50 vdc, i dq = 150 ma, p out = 330 w peak (39.6 w avg.), f = 1400 mhz, pulsed, 300 sec pulse width, 12% duty cycle power gain g ps 16.5 18 19.5 db drain efficiency d 59 (2) 60.5 (2) ? % input return loss irl ? -12 -9 db pulsed rf performance (in freescale application test fixture, 50 ohm system) v dd = 50 vdc, i dq = 150 ma, p out = 330 w peak (39.6 w avg.), f1 = 1200 mhz, f2 = 1300 mhz and f3 = 1400 mhz, pulsed, 300 sec pulse width, 12% duty cycle, t r = 50 ns relative insertion phase |?| ? 10 ? gain flatness g f ? 0.5 ? db pulse amplitude droop d rp ? 0.3 ? db harmonic 2nd and 3rd h2 & h3 ? -20 ? dbc spurious response ? -65 ? dbc load mismatch stability (vswr = 3:1 at all phase angles) vswr - s all spurs below - 60 dbc load mismatch tolerance (vswr = 5:1 at all phase angles) vswr - t no degradation in output power 1. part internally matched both on input and output. 2. drain efficiency is calculated by: d 100 p out v dd i peak where: i peak = (i avg - i dq ) / duty cycle (%) + i dq .
MRF6V14300HR3 mrf6v14300hsr3 3 rf device data freescale semiconductor figure 1. MRF6V14300HR3(hsr3) test circuit schematic z13 0.110 x 0.866 microstrip z14 0.630 x 0.866 microstrip z15 0.307 x 0.470 microstrip z16 0.045 x 0.221 microstrip z17 0.171 x 0.136 microstrip z18 0.120 x 0.430 microstrip z19 0.964 x 0.136 microstrip z20 0.177 x 0.078 microstrip z21 0.215 x 0.078 microstrip z22 1.577 x 0.070 microstrip z23 1.459 x 0.070 microstrip pcb arlon cuclad 250gx - 0300- 55 - 22, 0.030 , r = 2.55 z1 0.205 x 0.080 microstrip z2 0.721 x 0.022 microstrip z3 0.080 x 0.104 microstrip z4 0.128 x 0.022 microstrip z5 0.062 x 0.134 microstrip z6 0.440 x 0.022 microstrip z7 0.262 x 0.496 microstrip z8 0.030 x 0.138 microstrip z9 0.256 x 0.028 microstrip z10 0.058 x 0.254 microstrip z11 0.344 x 0.087 microstrip z12 0.110 x 0.087 microstrip z1 rf input c1 z2 z4 dut c2 rf output v bias v supply c9 c3 c5 c6 + z21 r1 z3 c7 + z5 + c8 c4 z12 z11 z10 z9 z20 z19 z18 z17 z16 z15 z13 z14 z8 z7 z6 z22 z23 table 5. MRF6V14300HR3(hsr3) test circuit component designations and values part description part number manufacturer c1 43 pf chip capacitor atc100b430jt500xt atc c2 18 pf chip capacitor atc100b180jt500xt atc c3 33 pf chip capacitor atc100b330jt500xt atc c4 27 pf chip capacitor atc100b270jt500xt atc c5 2.2 f, 100 v chip capacitor 2225x7r225kt3ab atc c6 470 f, 63 v electrolytic capacitor emvy630gtr471mmh0s multicomp c7 330 pf, 63 v electrolytic capacitor emvy630gtr331mmh0s multicomp c8 0.1 f, 35 v chip capacitor cdr33bx104akys kemet c9 10 f, 35 v tantalum capacitor t491d106k035at kemet r1 10 , 1/4 w chip resistor crcw120610r0fkea vishay
4 rf device data freescale semiconductor MRF6V14300HR3 mrf6v14300hsr3 figure 2. MRF6V14300HR3(hsr3) test circuit component layout mrf6v14300 rev. 1 c9 c8 r1 c4 c1 c3 c5 c6 c7 c2 cut out area
MRF6V14300HR3 mrf6v14300hsr3 5 rf device data freescale semiconductor typical characteristics 50 0.1 1000 020 10 v ds , drain?source voltage (volts) figure 3. capacitance versus drain - source voltage c, capacitance (pf) 30 c iss 0 160 0 v dd = 50 vdc, i dq = 150 ma f = 1200 mhz, pulse width = 300 sec 4 100 duty cycle (%) figure 4. safe operating area maximum operating t case ( c) 10 1 40 10 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs = 0 vdc 100 24 50 25 100 22 20 65 55 45 35 p out , output power (watts) pulsed figure 5. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 16 400 g ps 47 59 27 55 54 53 p in , input power (dbm) pulsed figure 6. pulsed output power versus input power 56 52 51 50 49 29 31 33 35 37 39 p out , output power (dbm) p3db = 55.30 dbm (339 w) actual ideal p1db = 54.77 dbm (300 w) 17 22 50 21 p out , output power (watts) pulsed figure 7. pulsed power gain versus output power g ps , power gain (db) 100 20 i dq = 600 ma 400 450 ma figure 8. pulsed power gain versus output power p out , output power (watts) pulsed g ps , power gain (db) v dd = 30 v 15 22 50 16 21 35 v 20 45 v 100 400 50 v 48 18 19 18 300 ma 150 ma 19 18 17 v dd = 50 vdc, i dq = 150 ma, f = 1400 mhz pulse width = 300 sec, duty cycle = 12% i dq = 150 ma, f = 1400 mhz pulse width = 300 sec duty cycle = 12% 40 v v dd = 50 vdc, i dq = 150 ma, f = 1400 mhz pulse width = 300 sec, duty cycle = 12% v dd = 50 vdc, f = 1400 mhz pulse width = 300 sec, duty cycle = 12% 20 57 58 140 120 80 60 40 20 28 612141618 p out = 330 w p out = 270 w p out = 300 w
6 rf device data freescale semiconductor MRF6V14300HR3 mrf6v14300hsr3 typical characteristics 6 0 400 0 25 c 85 c 3 1 200 100 p in , input power (watts) pulsed figure 9. pulsed output power versus input power p out , output power (watts) pulsed 24 300 5 t c = ?30 c v dd = 50 vdc, i dq = 150 ma, f = 1400 mhz pulse width = 300 sec, duty cycle = 12% 16 24 50 22 70 100 58 46 p out , output power (watts) pulsed figure 10. pulsed power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) d 22 400 25 c t c = ?30 c 85 c 34 20 18 55 c v dd = 50 vdc, i dq = 150 ma, f = 1400 mhz pulse width = 300 sec, duty cycle = 12% g ps ?30 c 25 c 55 c 85 c figure 11. broadband performance @ p out = 330 watts peak 9 19 1200 f, frequency (mhz) 15 13 1225 17 1250 1275 1300 1325 1350 1375 1400 ?25 63 62 60 0 ?5 11 g ps , power gain (db) 10 12 14 16 18 61 59 ?10 ?15 ?20 d, drain efficiency (%) irl, input return loss (db) v dd = 50 vdc, i dq = 150 ma, p out = 330 w peak (39.6 w avg.) pulse width = 300 sec, duty cycle = 12% g ps d irl 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 50 vdc, p out = 330 w peak, pulse width = 300 sec, duty cycle = 12%, and d = 60.5%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230
MRF6V14300HR3 mrf6v14300hsr3 7 rf device data freescale semiconductor z o = 10 z load z source f = 1200 mhz f = 1400 mhz f = 1200 mhz f = 1400 mhz v dd = 50 vdc, i dq = 150 ma, p out = 330 w peak f mhz z source z load 1200 2.70 - j4.10 2.97 - j2.66 1300 4.93 - j2.66 2.85 - j2.40 1400 7.01 - j2.87 3.17 - j1.78 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 13. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor MRF6V14300HR3 mrf6v14300hsr3 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465 - 06 issue g ni - 780 MRF6V14300HR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) case 465a - 06 issue h ni - 780s mrf6v14300hsr3
MRF6V14300HR3 mrf6v14300hsr3 9 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 sept. 2008 ? initial release of data sheet 1 oct. 2008 ? added footnote to describe the formula used to calculate values for min and typ drain efficiency in the functional test table, p. 2 ? updated fig. 4, safe operating area, to show additional curves for 270 w and 300 w output power, p. 5 ? added fig. 12, mttf versus junction temperature, p. 6 2 nov. 2008 ? changed ?multiply by? symbol to ?divide by? symbol in the functional test drain efficiency formula footnote, p. 2
10 rf device data freescale semiconductor MRF6V14300HR3 mrf6v14300hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 fax: +1 - 303- 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6v14300h rev. 2, 11/2008
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